THE THERMAL EQUILIBRIUM OF POINT DEFECTS For a precise prediction of dopant profiles in silicon the understanding of the influence of thermal oxidation on the diffusion of dopants
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Thermal Oxidation Times Effect on Structural and Morphological Properties of Molybdenum Oxide Thin Films Grown on Quartz Substrates
Molybdenum oxide (α-MoO)thin films were prepared on quartz and silicon substrates by thermal oxidation of Mo thin films deposited using DC magnetron sputtering method. The influence of thermal oxidation times ranging from 60-240 min on the structural and morphological properties of the preparedfilms was investigated using X-ray diffraction, Atomic force microscopy and Fourier transform infrared...
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